Ring filter synthesis and its BiCMOS 60 GHz implementation

GHZ Si BiCMOS ACTIVE INDUCTORS

The limitations on the implementation of BiCMOS active inductors at 2GHz are described. The circuit is based on a two BJT feedback configuration. Two types of biasing circuits were used: active bias and resistive bias. With 0.8μm BiCMOS standard technology is possible to obtain up to a few nanohenry inductance with a Q close to 3 at 2GHz. Two MMIC were studied.

Micromachined 60 GHz Air-filled Interdigital Bandpass Filter

A 4-pole interdigital filter has been demonstrated at 60 GHz with a bandwidth of 10 %, it is made using micromachining and a multi-layer bonding. The filter is an airfilled three-dimensional structure. It is formed of five layers which are bonded together. Each layer is micromachined SU-8 based, 200-μm thick, and finished with 1.5 μm gold coating. The resonators are thick stripline-like and enc...

Design of an Integrated 60 GHz Transceiver Front-End in SiGe:C BiCMOS Technology

This thesis describes the complete design of a low-cost 60 GHz front-end in SiGe BiCMOS technology. It covers the topics of a system plan, designs of building blocks, designs of application-boards and real environment tests. Different LNA and mixer topologies have been investigated and fabricated. Good agreements between measurements and simulations have been achieved due to the used component ...

60 GHz Radio

3-Gb/s 60-GHz Link With SiGe BiCMOS Receiver Front-End and CMOS Mixed-Mode QPSK Demodulator

We demonstrate 3-Gb/s wireless link using a 60-GHz receiver front-end fabricated in 0.25-μm SiGe:C bipolar complementary metal oxide semiconductor (BiCMOS) and a mixed-mode quadrature phase-shift keying (QPSK) demodulator fabricated in 60-nm CMOS. The 60-GHz receiver consists of a low-noise amplifier and a downconversion mixer. It has the peak conversion gain of 16 dB at 62 GHz and the 3-dB int...